%0 Journal Article
%T Highly Effective Half-Wave Rectifying Circuits Based on MOS Technology<br>一种高效MOS半波整流电路
%A LU Chao
%A LI Yong
%A ming
%A <br>路超
%A 李永明
%J 半导体学报
%D 2001
%I 
%X The improved half wave rectifier is presented by employing MOS technology based on the deficiency of conventional architecture.By using the character of parasitic capacitor,the charge transfer can elevate the rectifying efficiency,shorten the rising time and minimize the ripple factor to a degree.Thus,the performance of half wave rectifying circuits is much improved.The function mechanism of the circuit is analyzed and the Hspice simulation result is given.
%K MOS technology
%K half
%K wave rectifying circuits
%K parasitic capacitor
%K charge transfering<br>MOS工艺
%K 半波整流电路
%K 寄生电容
%K 电荷转运
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=613B492514691FF2&yid=14E7EF987E4155E6&vid=BC12EA701C895178&iid=708DD6B15D2464E8&sid=E34F1AE8B0BD0598&eid=7A62566A3C1FFBE1&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=4