%0 Journal Article
%T MS Interface Parameters Extracted from Current-Voltage Characteristic of PV Device<br>碲镉汞光伏器件的电极界面参数
%A HU Xiao ning
%A LI Yan jin
%A FANG Jia xiong
%A <br>胡晓宁
%A 李言谨
%A 方家熊
%J 半导体学报
%D 2001
%I 
%X The MS interface parameters are extracted from HgCdTe PV devices' current voltage characteristic by applying Thermionic Field Emission(TFE) theory and numerical analysis.Discussion shows that the barrier height of Sn/Au HgCdTe contact is pinned at "Bardeen limit" and the interface state density is one magnitude higher than that of the dielectric film HgCdTe interface.
%K MS interface
%K current
%K voltage characteristic
%K HgCdTe PV device<br>MS界面
%K 电流-电压特性
%K 碲镉汞光伏器件
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=241A66DECDAF3CEB&yid=14E7EF987E4155E6&vid=BC12EA701C895178&iid=708DD6B15D2464E8&sid=794F46304592E8E6&eid=C2A302D88B1505F1&journal_id=1674-4926&journal_name=半导体学报&referenced_num=1&reference_num=11