%0 Journal Article
%T Formation and Characterization of Tungsten Silicide GaAs Schottky Contacts<br>钨硅化物砷化镓Schottky接触的形成和特性
%A Zhu Zhongde/Microelectronics Research Institute
%A Peking UniversityXu Hong/Microelectronics Research Institute
%A Peking UniversityNing Baojun/Microelectronics Research Institute
%A Peking UniversityLi Xiaoguang/Microelectronics Research Institute
%A Peking University
%A <br>祝忠德
%A 许虹
%A 宁宝俊
%A 李晓光
%J 半导体学报
%D 1989
%I 
%X 本文报道了钨硅化物-砷化镓Schottky接触的形成过程和电学特性.实验表明,WSi_x/GaAs Schottky接触具有优越的I-V特性,势垒高度保持在0.8V,理想性因子实际上保持在1,并具有高温稳定性.研究表明,除了硅化物的成份,表面处理工艺和硅化物淀积技术也将对Schottky接触的I-V特性和热稳定性产生强烈的影响.本文提出利用对GaAs衬底的溅射腐蚀和在淀积过程中加以负的衬底偏置能显著地改进金属层与衬底的粘附性.
%K GaAs IC's
%K Schottky contacts
%K Refractory silicides<br>砷化镓
%K 集成电路
%K 肖特基接触
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=9C402D6AF67E2D67&yid=1833A6AA51F779C1&vid=F3090AE9B60B7ED1&iid=38B194292C032A66&sid=334E2BB8B9A55ABB&eid=CEC789B3C68C3BB3&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=0