%0 Journal Article
%T Fabrication of Submicron Gate Length Modulation Doped Al_xGa_(1-x)As/GaAs Field Effect Transistors<br>亚微米栅长调制掺杂场效应管(MODFET)的制造
%A Yang Yufen/Institute of Semiconductors
%A Academia Sinica
%A BeijingChen Zhonggui/Institute of Semiconductors
%A Academia Sinica
%A BeijingZhang Ju/Beijing Institute of Technology
%A <br>杨玉芬
%A 陈宗圭
%A 张矩
%J 半导体学报
%D 1989
%I 
%X 本文简述了调制掺杂场效应管(MODFET)材料参数的设计原理,0.2μm栅长T型栅的制造工艺以及为了获得0.2μm栅长的器件所要求的电子束曝光的详细条件.虽然所用材料的缓冲层纯度不够高(～1×10~(15)cm~(-3)),但由于采用了T型结构,器件室温跨导值仍达到了200mS/mm,在77K为375mS/mm.
%K Modulation doped
%K Two-dimensional electron gas
%K Submicron gate length
%K Field effect transistors<br>MOSFET
%K 掺杂
%K 亚微米栅长
%K 调制
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=4F2F46FA3E88ECFC&yid=1833A6AA51F779C1&vid=F3090AE9B60B7ED1&iid=38B194292C032A66&sid=C29816B2656377A7&eid=2BA123C6EB9D54C2&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=0