%0 Journal Article
%T Design and Fabrication of a High-Voltage nMOS Device
%A Li Hua
%A Song Limei
%A Du Huan
%A Han Zhengsheng
%A <br>Li Hu
%A Song Limei
%A Du Huan
%A and Han Zhengsheng
%J 半导体学报
%D 2005
%I 
%X High-voltage nMOS devices are fabricated successfully and the key technology parameters of the process are optimized by TCAD software.Experiment results show that the device’s breakdown voltage is 114V,the threshold voltage and maximum driven ability are 1.02V and 7.5mA(W/L=50),respectively.Experimental results and simulation ones are compared carefully and a way to improve the breakdown performance is proposed.
%K high-voltage nMOS devices
%K simulation
%K fabrication<br>high-voltage
%K nMOS
%K devices
%K simulation
%K fabrication
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=4C13A0FC07479489&yid=2DD7160C83D0ACED&vid=96C778EE049EE47D&iid=5D311CA918CA9A03&sid=1254F6F9A8625D48&eid=60784034DD03F1E1&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=10