%0 Journal Article
%T Determination of Minority Carrier Diffusion Length in Sillicon by Photoelectrochemical Method<br>光电化学法测定硅中少子扩散长度
%A Luo Maomin/Jiangxi Academy of SciencesPen Ruiwu/
%A <br>骆茂民
%A 彭瑞伍
%J 半导体学报
%D 1989
%I 
%X 本文将Gartener方程应用于硅材料,并提出了称之为I_o/I_(ph)-α~(-1)法的光电化学法,用于测定硅中少子扩散长度.文中研究了实验条件对测量结果的影响,讨论了该法的实用价值和给出了与SPV法对比的实验结果.
%K Sillicon
%K Diffusion length Liquid Junction<br>硅
%K 扩散长度
%K 液结
%K 光电化学法
%K 测定
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=962979E0FCC1D562&yid=1833A6AA51F779C1&vid=F3090AE9B60B7ED1&iid=E158A972A605785F&sid=C2F76551C0111538&eid=EC34D52BE81085CE&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=1