%0 Journal Article
%T Study on Kinetic Process of Silicon Film Deposited by Laser Plasma<br>激光等离子体淀积硅薄膜过程动力学研究
%A Dong Lifang/
%A <br>董丽芳
%A 傅广生
%A 李晓苇
%A 韩理
%A 张连水
%A 吕福润
%J 半导体学报
%D 1989
%I 
%X The process of film deposition by laser plasma is studied.The energy of laser,gas pres-sure and temperature of substrate dependence of deposition rate are measured.At the same timethe basic kinetic process in deposition is studied by OES and OLDI. Finally, the model of de-position is suggested based on the experiment results.
%K Laser plasma deposition
%K kinetic model
%K Film growth<br>激光
%K 等离子体
%K 淀积
%K 硅薄膜
%K 动力学
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=4E037B9D015A14F2&yid=1833A6AA51F779C1&vid=F3090AE9B60B7ED1&iid=E158A972A605785F&sid=5D8C08279A19B0D4&eid=B8F8200D88DDC7D6&journal_id=1674-4926&journal_name=半导体学报&referenced_num=2&reference_num=6