%0 Journal Article
%T Raman Spectra of High-Dose Ion-Implanted and Laser-Annealed Silicon Films on SOM Structures<br>高剂量离子注入激光退火SOM上硅膜的Raman光谱
%A Qian Youhua/
%A <br>钱佑华
%A 冷静民
%A 林成鲁
%A 邢昆山
%J 半导体学报
%D 1989
%I 
%X High-dose B~+ implanted silicon films on SOM structures, annealed with various laser po-wers have been measured by use of Raman spectroscopy.The effects of crystallization and impurity activation in the films might be observed unambiguously on the spectra.The SOMs withqualities required in the fabrication of pressure-sensitive devices can be achieved by laser anne-aling provided that certain kinds of critical condition are realized through the determination byRaman measurements.In order to distinguish the individual contribution from both crystalliza-tion and heavy doping to the Raman peak,two regions on the SOM sample were designed,dif-fering from each other only at whether it was implanted.The dependence of Raman featureson the laser power used in annealing,and the problem of Fano-type lineshape are discussed.
%K SOM
%K High-dose B~+ implantation
%K Stress induced
%K Fano lineshape<br>SOM
%K 高剂量
%K 离子注入
%K 硅
%K Raman光谱
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=06D0D79FAF1A9823&yid=1833A6AA51F779C1&vid=F3090AE9B60B7ED1&iid=B31275AF3241DB2D&sid=78BF76CF5B7CB0F2&eid=30F3EEEA29E34EE7&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=1