%0 Journal Article
%T A Method of Etching Submicron Vertical Silicon Screen<br>一种亚微米垂直硅墙的刻蚀方法
%A Tang Yusheng/LSI Microfabrtcating Institute
%A Shanghai Jiao Tong UniversityJiang Jianfei/LSI Microfabrtcating Institute
%A Shanghai Jiao Tong University
%A <br>汤玉生
%A 蒋建飞
%J 半导体学报
%D 1989
%I 
%X 亚微米垂直硅墙的制备是垂直硅薄膜耦合约瑟夫逊结的关键工艺.本文作者在普通光刻设备基础上,开发了一种在〈100〉硅片上制备亚微米硅墙的刻蚀方法:首先用普通光刻手段刻出较宽的墙区;其次,对非墙区进行迭加注入掺杂;第三,杂质高温横向扩散,第四,掺杂选择性刻蚀;第五,高温氧化减薄.实验结果表明,这种方法可以获得墙宽为0.29μm,墙高为1μm左右的硅墙,而且还有一定的改进潜力.
%K Vertical silicon screen
%K Josephson junction coupled with silicon membrane
%K Multi-implantation dope
%K selective etch of doped district<br>垂直硅墙
%K 亚微米
%K 刻蚀
%K 选择性
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=7D83782508C100F5FA985D40CA50C2F8&yid=1833A6AA51F779C1&vid=F3090AE9B60B7ED1&iid=0B39A22176CE99FB&sid=4C100B7696CE9E24&eid=1B97AE5098AEB49C&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=0