%0 Journal Article
%T P型锗中光子牵引效应
%A 王学忠
%A 刘继周
%A 王晓谦
%A 甘子钊
%J 半导体学报
%D 1986
%I 
%X 用选支连续波CO_2激光,在20-300K温度范围,测量了8 ×10~(14)-2 ×10~(15)cm~(-3)载流子浓度,<100>、<110>和<111>晶向的P-Ge中光子牵引的极性反转和各向异性效应.结果表明:80—300K,P-Ge中横向光子牵引电压与温度关系不大,而纵向光子牵引电压随温度变化显著,并发生电压极性的反转,反转温度T_o与杂质浓度、晶向有关,相同杂质浓度下,T_(o100]M)
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=D32E663DED5B9A1EDDD615BBE6BBF351&yid=4E65715CCF57055A&vid=DF92D298D3FF1E6E&iid=B31275AF3241DB2D&sid=90075EB19043D533&eid=6A9657F54F754BF6&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=0