%0 Journal Article
%T Ga_xIn_(1-x)P_yAs_(1-y)及Ga_xIn_(1-x)P_yAs_(1-y)/InP(110)异质结界面的电子能带结构
%A 徐至中
%J 半导体学报
%D 1986
%I 
%X 以半经验的紧束缚方法,采用非线性修正的虚晶近似,计算了与InP晶格匹配的Ga_xIn_(1-x)P_yAs_(1-y)的体电子能带结构以及 Ga_xIn_(1-x)P_yAs_(1-y)/InP(110)异质结的界面电子能带结构.
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=64FE074B0D5D1946&yid=4E65715CCF57055A&vid=DF92D298D3FF1E6E&iid=B31275AF3241DB2D&sid=D559883475316B44&eid=06DAE5E1DF7D0B6A&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=0