%0 Journal Article
%T Ga_(0.47)In_(0.53)As-InP异质结界面二维电子气
%A 郑有炓
%A 黄善祥
%A Y.H.Chang
%A J.P.Cheng
%A B.D.McCombe
%J 半导体学报
%D 1987
%I 
%X 本文报道了氯化物汽相外延生长Ga_(0.47)In_(0.53)As-InP异质结输运性质研究结果.4.2K下shubnikov-de Haas测量,Van de Pauw Hall测量和迴旋共振测量表明这种异质结界面存在高电子迁移率二维电子气.二维电子气浓度为1.7×10~(11)cm~(-2),电子迁移率为3.3×10~4cm~2/V·s.并观察到迴旋共振,给出电子有效质量为m_■~*=0.046m_o.
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=0EACA79DABB2A17B0F6DEBAF9B2BC101&yid=9C2DB0A0D5ABE6F8&vid=5D311CA918CA9A03&iid=94C357A881DFC066&sid=20ADD38F841C6A4B&eid=A726E84831FE609B&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=0