%0 Journal Article
%T HEMT电子迁移率与器件参数关系
%A 赵冷柱
%J 半导体学报
%D 1987
%I 
%X 本文计算了调制掺杂Ga_(1-x)Al_xA_3-GaAs异质结2DEG场效应晶体管(HEMT)电离中心散射电子迁移率μ_1.给出了μ_1与掺杂Ga_(1-x)Al_xA_s层的厚度d,掺杂浓度N_D,非掺杂的ca_(1-x)Al_xA_s层的厚度δ以及二维电子气的电荷面密度N_s的关系.
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=8194872EB7336C9B&yid=9C2DB0A0D5ABE6F8&vid=5D311CA918CA9A03&iid=38B194292C032A66&sid=EC34D52BE81085CE&eid=CA9ED1AB4D9E3E04&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=0