%0 Journal Article
%T Preparation and Photoluminescence Properties of Tb~(3+)-doped Al_2O_3 Films on Silicon Substrates<br>硅衬底Al_2O_3∶Tb~(3+)薄膜的制备及其发光性能
%A SHI Tao
%A ZHOU Jian
%A SHEN Qian-Hong
%A YANG Hui
%A <br>石涛
%A 周箭
%A 申乾宏
%A 杨辉
%J 无机材料学报
%D 2009
%I Science Press
%X Tb~(3+)-doped Al_2O_3 films on silicon substrates were prepared by the sol-gel method. The Tb~(3+)-doped Al_2O_3 films were characterized by differential thermal analysis/thermogravimetric analysis, X-ray diffraction, scanning electron microscope, atomic force microscope and photoluminescence spectra as well. The photoluminescence mechanism of Tb~(3+)-doped Al_2O_3 films was analyzed. The effects of heat-treatment temperature and Tb3+ ion concentration on the luminescence property of Tb~(3+)∶Al_2O_3 films were discussed. The results show that the prepared Al_2O_3∶Tb~(3+) film has high luminescence intensity, the optimum excitation wavelength is 240nm, the optimum concentration of Tb~(3+) dopant is 5mol%, and the main emission is at 544nm under excitation at 240nm. And the prepared Al_2O_3∶Tb~(3+) film has a dense, smooth and crack-free surface texture with a roughness of less than 1.3nm. It is suggested that the film is good enough for fabrication and application of silicon based photoelectronic devices.
%K sol-gel
%K film
%K photoluminescence<br>溶胶-凝胶法
%K Al2O3∶Tb3+
%K 薄膜
%K 光致发光
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=84529CA2B2E519AC&jid=ABC0063016AF57E1C73EF43C8D2212BD&aid=B31691A6F952167D54967C531395403D&yid=DE12191FBD62783C&vid=B91E8C6D6FE990DB&iid=B31275AF3241DB2D&sid=9236E752FE2887AD&eid=8DABBEB130EFF191&journal_id=1000-324X&journal_name=无机材料学报&referenced_num=0&reference_num=15