%0 Journal Article
%T Equilibrium Prediction of the Role of Key Species in the Chemical Vapor Deposition of Silicon Carbide<br>化学气相沉积碳化硅的热力学分析
%A LU Cui-Ying
%A CHENG Lai-Fei
%A ZHANG Li-Tong
%A XU Yong-Dong
%A ZHAO Chun-Nian
%A <br>卢翠英
%A 成来飞
%A 张立同
%A 徐永东
%A 赵春年
%J 无机材料学报
%D 2008
%I Science Press
%X Based on Gibbs minimum free energy principle, homogeneous equilibrium calculations were focused by Factsage code for MTS/H2 mixture. An assessment was made to determine the key species to SiC deposition. The results indicate that SiCl2 and C2H2 may contribute to SiC deposition, and their formations are favored high temperature and low pressure. Most of silicon-containing and carbon-containing species are SiCl4 and CH4, at low temperature and high pressure. Other substances such as hydrocarbons, orgamosilicons and silane compounds are probably unimportant for deposition process because of their low concentrations and small surface reactive sticking coefficient. Silicon and carbon are formed independently, based on the fact that there are barely species containing Si--C and Si--Si in gas phase. The ratio of silicon and carbon in sample is determined by their kinetics, respectively.
%K thermodynamic
%K surface reactive sticking coefficient
%K chemical vapor deposition
%K silicon carbide<br>热力学
%K 表面反应粘结系数
%K 浓度
%K 化学气相沉积
%K 碳化硅
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=84529CA2B2E519AC&jid=ABC0063016AF57E1C73EF43C8D2212BD&aid=9C8AD6E6C188F3C4AE2FBABFBA7855F8&yid=67289AFF6305E306&vid=EA389574707BDED3&iid=B31275AF3241DB2D&sid=53A4507B400B4E65&eid=D16E75D5E400A93D&journal_id=1000-324X&journal_name=无机材料学报&referenced_num=0&reference_num=20