%0 Journal Article
%T Laser-induced Crystallization Behavior of the Sputtered Ge2Sb2Te5 Film<br>激光致溅射沉积Ge2Sb2Te5薄膜的结晶行为研究
%A LIU Bo
%A RUAN Hao
%A GAN Fu-Xi
%A <br>刘波
%A 阮昊
%A 干福熹
%J 无机材料学报
%D 2002
%I Science Press
%X The crystallization behavior of sputtered Ge2Sb2Te5 films initialized by initializer unit was studied by using XRD. It is indicated that only the amorphous phase to FCC phase transformation occurs during laser annealing of the normal phase-change structure, which is benefit for raising the phase-change optical disc's signal-to-noise ratio. The phase transformation from FCC to HCP doesn't occur, which occurs during the heat-induced phase-change process. The initialization power and velocity affect the Ge2Sb2Tes film's crystallization fraction.
%K Ge2Sb2Te5
%K laser-induced phase-change
%K XRD
%K FCC<br>激光致溅射沉积
%K Ge2Sb2Te5薄膜
%K 结晶行为
%K 激光致相变
%K X射线衍射
%K 面心立方
%K 光盘
%K 相变光存储材料
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=84529CA2B2E519AC&jid=ABC0063016AF57E1C73EF43C8D2212BD&aid=6BB90E5F41C4381F&yid=C3ACC247184A22C1&vid=BCA2697F357F2001&iid=38B194292C032A66&sid=826ED638BDB6F0D0&eid=DB7B2C790D19BE6E&journal_id=1000-324X&journal_name=无机材料学报&referenced_num=2&reference_num=10