%0 Journal Article
%T Influence of Annealing on Electron Field Emission from AlN Films Prepared by RF Reactive Sputtering<br>热退火对射频反应溅射氮化铝薄膜场电子发射的影响
%A SHAO Le-Xi
%A LIU Xiao-Ping
%A XIE Er-Qing
%A HE De-Yan
%A CHEN Guang-Hua
%A <br>邵乐喜
%A 刘小平
%A 谢二庆
%A 贺德衍
%A 陈光华
%J 无机材料学报
%D 2001
%I Science Press
%X Aluminium nitride(AIN) thin films were deposited by RF reactive sputtering and characterized with XPS and XRD. The influence of thermal annealing on the electron field emission characteristics of the AIN coating on Si substrate was investigated. The results show that the annealing treatment of the films is a prefer approach to improve the emission stability and has a remarkable effect on the turn-on voltage and hysteresis of the emission. It is suggested that the mechanism of these effects could be attributed to that the variation of emission properties of the films may arise from the change of surface electron affinity and conductivity due to the change of impurities and defects density in the films during annealing treatment at various temperatures.
%K AIN film
%K electron field emission
%K annealing
%K hysteresis<br>AIN薄膜
%K 场电子发射
%K 热退火
%K 氮化铝薄膜
%K 射频反应溅射
%K 冷阴级材料
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=84529CA2B2E519AC&jid=ABC0063016AF57E1C73EF43C8D2212BD&aid=C4819654BFD33F56&yid=14E7EF987E4155E6&vid=7801E6FC5AE9020C&iid=94C357A881DFC066&sid=C368DFEE1EA2C91D&eid=5839F1C61E1C000D&journal_id=1000-324X&journal_name=无机材料学报&referenced_num=3&reference_num=10