%0 Journal Article
%T Physical Properties, Bulk Growth, and Applications of SiC Single Crystal<br>SiC单晶的性质、生长及应用
%A WANG Shi-Zhong
%A XU Liang-Ying
%A SHU Bi-Yun
%A XIAO Bing
%A ZHUANG Ji-Yong
%A SHI Er-We
%A <br>王世忠
%A 徐良瑛
%A 束碧云
%A 肖兵
%A 庄击勇
%A 施尔畏
%J 无机材料学报
%D 1999
%I Science Press
%X This article reviewed on the physical properties, the crystal structure, the growth methods, and the applications of the SiC single crystal The preparation of the SiC single crystal by sublimation method was introduced in detail The defects of SiC single crystal caused in the PVT process were discussed
%K silicon carbide
%K crystal
%K growth
%K physical property
%K semiconductor device<br>碳化硅
%K 单晶
%K 半导体器件
%K 晶体生长
%K PVT法
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=84529CA2B2E519AC&jid=ABC0063016AF57E1C73EF43C8D2212BD&aid=894D70E4A6F117E7BD99FFA69FAF7A7C&yid=B914830F5B1D1078&vid=F3583C8E78166B9E&iid=E158A972A605785F&sid=F3549E0657848E2A&eid=D45762219109E903&journal_id=1000-324X&journal_name=无机材料学报&referenced_num=0&reference_num=47