%0 Journal Article
%T Poisoning Phenomenon on the Surface of ITO Target During DC-Magnetron Sputtering Process<br>ITO靶材在磁控溅射过程中的毒化现象
%A KONG Wei-Hua
%A <br>孔伟华
%J 无机材料学报
%D 2002
%I Science Press
%X The poisoning phenomenon on the surface of ITO target during DC-Magnetron sputtering process was investigated. XRD, EPMA and LECO oxygen analyzer were used to study the poisoning mechanism and the factors leading to poisoning were analyzed. The result shows that In2O3 is decomposed into In2O and O2. This reaction on the surface of ITO target is the reason causing the poisoning phenomenon.
%K DC-magnetron sputtering
%K ITO target
%K poisoning phenomenon<br>ITO靶材
%K 直流磁控反应溅射
%K 毒化现象
%K 三氧化二铟
%K 二氧化锡
%K 导电氧化物半导体
%K 薄膜
%K 制备
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=84529CA2B2E519AC&jid=ABC0063016AF57E1C73EF43C8D2212BD&aid=3EDF712153D36C24&yid=C3ACC247184A22C1&vid=BCA2697F357F2001&iid=94C357A881DFC066&sid=74253B3A525E9002&eid=61EDB4BBA42E40FF&journal_id=1000-324X&journal_name=无机材料学报&referenced_num=0&reference_num=7