%0 Journal Article
%T Characteristics of ZnS-SiO2 Film Used as Phase-change Optical Disk Dielectric Layer<br>相变光盘介电层ZnS-SiO2薄膜的性能研究
%A LIU Bo
%A RUAN Hao
%A CAN Fu-Xi
%A <br>刘波
%A 阮昊
%A 干福熹
%J 无机材料学报
%D 2003
%I Science Press
%X The characteristics of ZnS-SiO2 dielectric film were studied by using AFM, XRD, TEM, UV/Vis/NIR spectrometer, and spectroscopic ellipsometer methods. It was indicated that the as-deposited ZnS-SiO2 film is amorphous and has Straski-Krastanov type growth characteristic. The surface of the ZnS-SiO2 film is very smooth. The grain size of the ZnS-SiO2 film is very small, around 2-10nm. The transmissivity of the ZnS-SiO2 film is large and the extinction coefficient is very small, which are beneficial to reduce the loss of laser power. The refractive index of the ZnS-SiO2 film is large and the recording layer can be protected very well.
%K ZnS-SiO2
%K dielectric layer
%K phase-change optical disk<br>ZnS－SiO2薄膜
%K 性能
%K 介电层
%K 相变光盘
%K 硫化锌
%K 二氧化硅
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=84529CA2B2E519AC&jid=ABC0063016AF57E1C73EF43C8D2212BD&aid=2FB126F2010DB398&yid=D43C4A19B2EE3C0A&vid=13553B2D12F347E8&iid=CA4FD0336C81A37A&sid=6235172E4DDBA109&eid=5D9D6A8FC2C66FD8&journal_id=1000-324X&journal_name=无机材料学报&referenced_num=2&reference_num=10