%0 Journal Article
%T 3D simulation of heavy ion induced charge collection of single event effects in SiGe heterojunction bipolar transistor<br>重离子导致的锗硅异质结双极晶体管单粒子效应电荷收集三维数值模拟
%A Zhang Jin-Xin
%A Guo Hong-Xia
%A Guo Qi
%A Wen Lin
%A Cui Jiang-Wei
%A Xi Shan-Bin
%A Wang Xin
%A Deng Wei
%A <br>张晋新
%A 郭红霞
%A 郭旗
%A 文林
%A 崔江维
%A 席善斌
%A 王信
%A 邓伟
%J 物理学报
%D 2013
%I 
%X In this paper, we establish a three-dimensional numerical simulation model for SiGe heterojunction bipolar transistor by the technology computer aided design simulations. In the simulation we investigate the charge collection mechanism by heavy ion radiation in SiGe HBT technology. The results show that the charge collected by the terminals is a strong function of the ion striking position. The sensitive area of charge collection for each terminal is identified based on the analyses of the device structure and simulation results. For a normal strike within and around the area of the collector/substrate junction, most of the electrons and holes are collected by the collector and substrate terminals, respectively. For an ion strike between the shallow trench edges surrounding the emitter, the base collects a large quantity of charge, while the emitter collects a negligible quantity of charge.
%K SiGe heterojunction bipolar transistor
%K single event effect
%K charge collection
%K three-dimensional numer-ical simulation<br>锗硅异质结双极晶体管
%K 单粒子效应
%K 电荷收集
%K 三维数值仿真
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=29DF2CB55EF687E7EFA80DFD4B978260&aid=530695581BF85784F61CA7EFF4B76882&yid=FF7AA908D58E97FA&iid=E158A972A605785F&journal_id=1000-3290&journal_name=物理学报&referenced_num=0&reference_num=0