%0 Journal Article
%T Power characteristics of SiC bipolar-mode JFET<br>双极模式SiCJFET功率特性的研究
%A Zhang Lin
%A Yang Fei
%A Xiao Jian
%A Gu Wen-Ping
%A Qiu Yan-Zhang
%A <br>张林
%A 杨霏
%A 肖剑
%A 谷文萍
%A 邱彦章
%J 物理学报
%D 2011
%I 
%X The operational mechanism of normally-off type bipolar-mode SiC junction field effect transistor (BJFET) is studied by using a two-dimensional numerical model. Compared with the unipolar-mode SiC JFET, the bipolar-mode can reduce the on-state resistor of the SiC JFET effectively and compromise between the on-state and off-state characteristic of the device. The simulation resluts also show that switching time of BJFET increases remarkably.
%K silicon carbon
%K bipolar mode
%K JFET
%K model<br>碳化硅
%K 双极型
%K 结型场效应晶体管
%K 模型
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=29DF2CB55EF687E7EFA80DFD4B978260&aid=F437B1BF01E7F48639A6E0B7C9E7DD36&yid=9377ED8094509821&vid=BFE7933E5EEA150D&iid=F3090AE9B60B7ED1&sid=BCB29B1731BBFDFE&eid=BCB29B1731BBFDFE&journal_id=1000-3290&journal_name=物理学报&referenced_num=0&reference_num=12