%0 Journal Article
%T Mosaic structure in epitaxial GaN filmvarying with thickness<br>GaN薄膜中的马赛克结构随厚度发生的变化
%A Zhang Yun
%A Xie Zi-Li
%A Wang-Jian
%A Tao Tao
%A Zhang Rong
%A Liu Bin
%A Chen Peng
%A Han Ping
%A Shi Yi
%A Zheng You-Dou
%A <br>张韵
%A 谢自力
%A 王健
%A 陶涛
%A 张荣
%A 刘斌
%A 陈鹏
%A 韩平
%A 施毅
%A 郑有炓
%J 物理学报
%D 2013
%I 
%X In this article. We report on the study of mosaic structures of different thick GaN films grown on sapphire (0001) by metalorganic chemical vapor deposition (MOCVD), using high resolution x-ray diffraction. The result from the symmetrical reflections show that the mosaic vertical and lateral correlation lengths that are calculated by two methods increase with film thickness increasing, and the vertical correlation lengths are close to the film thickness, and the same trend in the lateral correlation lengths derived from the reciprocal space maps. By the help of asymmetrical reflections and Williamson-Hall extrapolation method, the tilt and twist mosaic drop with thickness increasing at different rates. All this shows that the increase in thickness lads to the more uniform and neat grain arrangement and the higher-quality epitaxial wafers.
%K GaN thin film
%K mosaic structure
%K thickness
%K HRXRD<br>GaN薄膜马赛克结构
%K 厚度
%K HRXRD
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=29DF2CB55EF687E7EFA80DFD4B978260&aid=164B941495554643B0FF370A4AEFD4AA&yid=FF7AA908D58E97FA&iid=94C357A881DFC066&journal_id=1000-3290&journal_name=物理学报&referenced_num=0&reference_num=0