%0 Journal Article
%T Study of the contact property between BZO and p-a-SiC in amorphous silicon solar cell<br>非晶硅太阳电池BZO/p-a-SiC:H接触特性改善的研究
%A Wang Li
%A Zhang Xiao-Dan
%A Yang Xu
%A Wei Chang-Chun
%A Zhang De-Kun
%A Wang Guang-Cai
%A Sun Jan
%A Zhao Ying
%A <br>王利
%A 张晓丹
%A 杨旭
%A 魏长春
%A 张德坤
%A 王广才
%A 孙建
%A 赵颖
%J 物理学报
%D 2013
%I 
%X Highly conductive p-type microcrystalline silicon thin layer is inserted between the front layer (ZnO:B) and the window layer(p-a-SiC) in a p-i-n amorphous silicon solar cell, and the inserted layer is found to be able to eliminate the non-ohmic contact, which is caused by the difference in the work function between the ZnO:B and p-a-SiC. The properties of the p-type microcrystalline silicon are studied by varying layer thickness, hydrogen dilution ratio and B2H6/SiH4 ratio. The optimized p-type microcrystalline silicon film can have a dark conductivity as large as 4.2 S/cm at a thickeness of 20 nm. The p-i-n type amorphous silicon solar cell with the p-type microcrystalline silicon is shown to have a good open circuit voltage and fill factor compared with without the p-type microcrystalline silicon layer.
%K ZnO:B
%K p-type microcrystalline silicon
%K amorphous silicon top cell
%K non-ohmic contact<br>氧化锌
%K p型微晶硅
%K 非晶硅顶电池
%K 非欧姆接触
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=29DF2CB55EF687E7EFA80DFD4B978260&aid=164B94149555464375EEBA26E90CDF3C&yid=FF7AA908D58E97FA&iid=94C357A881DFC066&journal_id=1000-3290&journal_name=物理学报&referenced_num=0&reference_num=0