%0 Journal Article
%T Effects of Ge profile on thermal characteristics of SiGe heterojunction bipolar transistor with non-uniform doping profile in base region<br>Ge组分分布对基区杂质非均匀分布的SiGe HBT温度特性的影响
%A Zhang Yu-Jie
%A Zhang Wan-Rong
%A Jin Dong-Yue
%A Chen Liang
%A Fu Qiang
%A Guo Zhen-Jie
%A Xing Guang-Hui
%A Lu Zhi-Yi
%A <br>张瑜洁
%A 张万荣
%A 金冬月
%A 陈亮
%A 付强
%A 郭振杰
%A 邢光辉
%A 路志义
%J 物理学报
%D 2013
%I 
%X As is well known, base region is the design focus of bipolar junction transistor (BJT). Generally, the doping distribution in base is non-uniform. In this paper, the effects of different Gaussian dopings in the base on bulk temperature distribution, temperature dependences of current gain and cut-off frequency are first studied. It is found that current gain and cut-off frequency of BJT have positive temperature coefficients, and the temperature in bulk is high. Then, the effect of Ge composition distribution on these device parameters is investigated. It is found that the SiGe heterojunction bipolar transistors (HBTs) with box Ge composition distribution and trapezoidal Ge composition distribution have negative temperature coefficients of current gain and cut-off frequency, and have good bulk temperature distributions. Furthermore, the SiGe HBT with trapezoidal Ge profile has higher current gain and cut-off frequency, and its temperature insensitivity is kept. The good trade-off is made among the magnitudes of current gain and cut-off frequency, temperature sensitivity and bulk temperature distribution.
%K SiGe heterojunction bipolar transistor
%K thermal characteristic
%K base doping
%K Ge-profile<br>SiGe异质结双极型晶体管
%K 温度特性
%K 基区杂质分布
%K Ge组分分布
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=29DF2CB55EF687E7EFA80DFD4B978260&aid=96293AEB9294B34DF92CF8967625DDFE&yid=FF7AA908D58E97FA&iid=38B194292C032A66&journal_id=1000-3290&journal_name=物理学报&referenced_num=0&reference_num=0