%0 Journal Article
%T Growth and device characteristics of nano-folding InGaN/GaNmultiple quantum well LED<br>纳米折叠InGaN/GaN LED材料生长及器件特性
%A Chen Gui-Feng
%A Tan Xiao-Dong
%A Wan Wei-Tian
%A Shen Jun
%A Hao Qiu-Yan
%A Tang Cheng-Chun
%A Zhu Jian-Jun
%A Liu Zong-Shun
%A Zhao De-Gang
%A Zhang Shu-Ming
%A <br>陈贵锋
%A 谭小动
%A 万尾甜
%A 沈俊
%A 郝秋艳
%A 唐成春
%A 朱建军
%A 刘宗顺
%A 赵德刚
%A 张书明
%J 物理学报
%D 2011
%I 
%X GaN-based LED wafers with nano-folding InGaN/GaN multiple quantum wells (MQWs) are grown on n-GaN nanopillar array templates which are fabricated using self assembled Ni nanodots as etching mask. Photoluminescence (PL) spectra of the wafer show uniform light emission wavelength over the whole area of it. No blue shift of the main peak is observed in the electroluminescence (EL) spectra of the LED devices fabricated with the wafer as the injection current increases from 10 mA to 80 mA. This can be ascribed to the reduced quantum confinement Stark effect (QCSE) and the resulting less band gap tilted by strain relaxation in the nano-folded MQWs. The device shows an excellent rectifying behavior with a forward voltage of 4.6 V under 20 mA injection current.
%K nano-LED
%K photoluminescence (PL)
%K electroluminescence (EL)<br>纳米柱LED
%K 光致发光
%K 电致发光
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=29DF2CB55EF687E7EFA80DFD4B978260&aid=27C14E609A3E452CC6133F3AAAA72F38&yid=9377ED8094509821&vid=BFE7933E5EEA150D&iid=DF92D298D3FF1E6E&sid=958C5266F8CB2A5F&eid=958C5266F8CB2A5F&journal_id=1000-3290&journal_name=物理学报&referenced_num=0&reference_num=12