%0 Journal Article
%T Amending the ferromagnetic properties of Ga0.94Mn0.06As films by He+ irradiation<br>He+辐照对Ga0.94Mn0.06As薄膜铁磁性的改善
%A Ding Bin-Feng
%A Xiang Feng-Hu
%A Wang Li-Ming
%A Wang Hong-Tao
%A <br>丁斌峰
%A 相凤华
%A 王立明
%A 王洪涛
%J 物理学报
%D 2012
%I 
%X Ion irradiation of semiconductors is a well understood method to tune the carrier concentration in a controlled manner. We show that the ferromagnetism in Ga0.94Mn0.06As films, known to be hole-mediated, can be modified by He ion irradiation. The coercivity can be increased by more than three times. The magnetization, Curie temperature and the saturation field along the out-of-plane hard axis all decrease as the fluence increases. The electrical and structural characterization of the irradiated Ga0.94Mn0.06As layers indicates that the controlled amending of magnetism results from a compensation of holes by generated electrical defects and not from a structural modification.
%K ion irradiation
%K ferromagnetism
%K magnetoresistance<br>离子辐照
%K 铁磁性
%K 磁阻
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=29DF2CB55EF687E7EFA80DFD4B978260&aid=2C2DE33E892A8820B6C1A8BBB59DB5B1&yid=99E9153A83D4CB11&vid=1D0FA33DA02ABACD&iid=E158A972A605785F&sid=91310B6EA89D7DAE&eid=91310B6EA89D7DAE&journal_id=1000-3290&journal_name=物理学报&referenced_num=0&reference_num=26