%0 Journal Article
%T Influence of the ambient pressure of Ar on the range of nucleation area of Si nanoparticles<br>Ar环境气压对纳米Si晶粒成核区范围的影响
%A Chu Li-Zhi
%A Deng Ze-Chao
%A Ding Xue-Cheng
%A Zhao Hong-Dong
%A Wang Ying-Long
%A Fu Guang-Sheng
%A <br>褚立志
%A 邓泽超
%A 丁学成
%A 赵红东
%A 王英龙
%A 傅广生
%J 物理学报
%D 2012
%I 
%X In order to investigate the range of nucleation area of Si nanoparticles under different pressures, a single crystalline Si target with high resistivity is ablated by a XeCl excimer laser (wavelength 308 nm, laser fluence 3 J/cm2) in an ambient pressure range from 1 to 200 Pa of pure Ar gas. The Si nanocrystalline films are systemically deposited on glass or single crystalline Si substrates that are lined up at a distance of 2.0 cm under the ablation point. Raman and X-ray diffraction spectra indicate that the films are nanocrystalline. Scanning electron microscope images of the films show that the ambient pressure effect on the average size and the distributing range of Si nanoparticles on the substrate. According to the method of determining the location of nucleation area, it is found that the range of nucleation area of Si nanoparticles first broadens and then narrows with the increase of ambient pressure. The dynamics is analysed theoretically to explain the results.
%K pulsed laser ablation
%K Si nanoparticles
%K ambient pressure
%K nucleation area<br>脉冲激光烧蚀
%K 纳米Si晶粒
%K 环境气压
%K 成核区
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=29DF2CB55EF687E7EFA80DFD4B978260&aid=78F360FC29C47911B5F8B799353E09AD&yid=99E9153A83D4CB11&vid=1D0FA33DA02ABACD&iid=F3090AE9B60B7ED1&sid=0D3AE6E43FB5E76C&eid=0D3AE6E43FB5E76C&journal_id=1000-3290&journal_name=物理学报&referenced_num=0&reference_num=10