%0 Journal Article
%T Surface crystallization of amorphous fused silica during electron cyclotron resonance plasma etching<br>非晶熔石英表面等离子体刻蚀过程 中的表面晶化研究
%A Wang Feng
%A Wu Wei-Dong
%A Jiang Xiao-Dong
%A Tang Yong-Jian
%A <br>王锋
%A 吴卫东
%A 蒋晓东
%A 唐永建
%J 物理学报
%D 2012
%I 
%X After low pressure fluorine plasma ecthing and oxygen ion passivation,a crystallized layer composed of SiO2 nano-crystal grains is observed in an amorphous fused silica surface.The depth of crystallized layer is at least several hundreds nanometers.Fluorine and carbon ion are generated from Ar/CF4 by the method of electron cyclotron resonance（ECR）.F ion breaks Si-O band of initial silica surface layer and releases O ion.Carbon ion combines with oxygen ion,and turns into CO2,and SiF4 is generated from fluorine and silicon.After initial surface layer is removed,unsaturated Si atom remains.Si dangling bond recombines with new O ion and then creates crystallizedα-cristobalite nano-crystal grains under a high temperature.
%K amorphous fused silica
%K crystallized a-cristobalite
%K low pressure plasmas etching<br>非晶态熔石英
%K 结晶态α
%K 方石英
%K 低压等离子刻蚀
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=29DF2CB55EF687E7EFA80DFD4B978260&aid=4C92C33EB4B06FC5C32841075D594F53&yid=99E9153A83D4CB11&vid=1D0FA33DA02ABACD&iid=0B39A22176CE99FB&sid=6C55B56E28EED662&eid=6C55B56E28EED662&journal_id=1000-3290&journal_name=物理学报&referenced_num=0&reference_num=18