%0 Journal Article
%T Influence of gate voltage on gate-induced drain leakage current in ultra-thin gate oxide and ultra-short channel LDD nMOSFET's<br>超薄栅超短沟LDD nMOSFET中栅电压对栅致漏极泄漏电流影响研究
%A Chen Hai-Feng
%A Guo Li-Xin
%A <br>陈海峰
%A 过立新
%J 物理学报
%D 2012
%I 
%X The influence of gate voltage VG on gate induced drain leakage (GIDL) current is studied in LDD nMOSFET with a gate oxide of 1.4nm and a channel length of 100nm. It is found that the split phenomena of ln(Id/(VDG-1.2))-1/(VDG-1.2) curves under different VG values occurs, which are different from the large MOSFET. Through comparing varieties of ln(Id/(VDG-1.2)) of different VG values, the mechanism of this split phenomenon is obtained. This is ascribed to the change of the hole-tunneling part of GIDL current under different VG values. The absolute value of ln(Id/(VDG-1.2)) curve slope decrease with |VG| value decreasing . It is further found that the values of slope c and intercept d of ln(Id/(VDG-1.2)) curves are linear with VG and the slopes of c and d are 3.09 and -0.77, respectively. The values of c and d quantificationally show the influence of VG on the GIDL current in an ultra-thin ultra-short MOSFET. On the basis of these results, a new GIDL current model including VG is proposed.
%K GIDL
%K band-to-band tunneling
%K CMOS
%K LDD nMOSFET<br>GIDL
%K 带带隧穿
%K CMOS
%K LDD
%K nMOSFET
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=29DF2CB55EF687E7EFA80DFD4B978260&aid=4C92C33EB4B06FC54AE7804C52599617&yid=99E9153A83D4CB11&vid=1D0FA33DA02ABACD&iid=0B39A22176CE99FB&sid=D94C354A1F03E12B&eid=D94C354A1F03E12B&journal_id=1000-3290&journal_name=物理学报&referenced_num=0&reference_num=17