%0 Journal Article
%T A physics-based model of insulated gate bipolar transistor with all free-carrier injection conditions in base region<br>一种考虑IGBT基区载流子注入条件的物理模型
%A Du Ming-Xing
%A Wei Ke-Xin
%A <br>杜明星
%A 魏克新
%J 物理学报
%D 2011
%I 
%X A physics-based model of insulated gate bipolar transistor (IGBT) with all free-carrier injection conditions in a base region is presented, from which the ambipolar transport equations (ATEs) in high-level injection and low-level injection are deduced separately. Moreover, the boundary conditions of ATE are determined. In a more compact solution a Fourier-series solution for the ATE is used in this paper. Simulation and experimental results given by manufacturers are presented and compared with each other to validate the modeling approach. Physics-based IGBT model is used which is proved accurate.
%K insulated gate bipolar transistors
%K physics-based model
%K injection condition
%K ambipolar transport equation<br>绝缘栅极双极晶体管
%K 物理模型
%K 注入条件
%K 双极输运方程
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=29DF2CB55EF687E7EFA80DFD4B978260&aid=F437B1BF01E7F48650224835A4C1F859&yid=9377ED8094509821&vid=BFE7933E5EEA150D&iid=F3090AE9B60B7ED1&sid=9A077970E6B0FADE&eid=9A077970E6B0FADE&journal_id=1000-3290&journal_name=物理学报&referenced_num=0&reference_num=16