%0 Journal Article
%T A latent defect degradation model of metal-oxide-semiconductor field effect transistor based on pre-irradiation 1/f noise<br>基于辐照前1/f噪声的金属-氧化物-半导体场效应晶体管潜在缺陷退化模型
%A Sun Peng
%A Du Lei
%A Chen Wen-Hao
%A He Liang
%A <br>孙鹏
%A 杜磊
%A 陈文豪
%A 何亮
%J 物理学报
%D 2012
%I 
%X Based on metal-oxide-semiconductor field effect transistor (MOSFET) microscopic mechanism of radiation damage, a relation between radiation induced increase in number of oxide hole-traps and post-irradiation threshold voltage drift is proposed. Then, Based on MOSFET microscopic mechanism of 1/f noise generation, a quantitative relationship between pre-irradiation 1/f noise power spectral amplitude and post-irradiation threshold voltage drift is founded, which accords well with the experimental results. This relationship shows that pre-irradiation 1/f noise power spectral amplitude is proportional to post-irradiation threshold voltage drift, which can reflect the degradation of latent defect in MOSFET. So, this modal is helpful to characterize the quantity and severity of latent defect in MOSFET by using 1/f noise parameters.
%K 1/f noise
%K latent defect
%K interface trap
%K oxide trap<br>1/f噪声
%K 潜在缺陷
%K 界面陷阱
%K 氧化层陷阱
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=29DF2CB55EF687E7EFA80DFD4B978260&aid=790A9358A1C1D6559B847F62F7582C2F&yid=99E9153A83D4CB11&vid=1D0FA33DA02ABACD&iid=B31275AF3241DB2D&sid=DAAA0139CCDC3176&eid=DAAA0139CCDC3176&journal_id=1000-3290&journal_name=物理学报&referenced_num=0&reference_num=17