%0 Journal Article
%T Ni-FUSI metal gate work function modulation technology<br>Ni全硅化金属栅功函数调节技术研究
%A Zhou Hua-Jie
%A Xu Qiu-Xia
%A <br>周华杰
%A 徐秋霞
%J 物理学报
%D 2011
%I 
%X Through fabricating Ni-FUSI metal gate capacitors and analyzing their C-V and Vfb-EOT characteristics, it is found that Ga or Yb has more favorable modulation ability than conventional dopants. The work function of Ni-FUSI metal gate is modulated close to the top of valince band and the bottom of conduction band, which meets the requirement of high performance CMOS devices. The high modulation abilities of Ga and Yb are explained by dipole theory. Moreover, it is found that the capacitance value of Ni-FUSI metal gate capacitor increases after incorporating Ga or Yb into Ni-FUSI metal gate, but the gate leakage current decreases. And the detailed explanation for the above phenomena is also included in this article by analyzing C-V and gate leakage current characteristics.
%K metal gate
%K work function
%K silicide<br>金属栅电极
%K 功函数
%K 硅化物
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=29DF2CB55EF687E7EFA80DFD4B978260&aid=F437B1BF01E7F4865610199914983C10&yid=9377ED8094509821&vid=BFE7933E5EEA150D&iid=F3090AE9B60B7ED1&sid=0D3AE6E43FB5E76C&eid=0D3AE6E43FB5E76C&journal_id=1000-3290&journal_name=物理学报&referenced_num=0&reference_num=26