%0 Journal Article
%T Effect of exponential-doping structure on quantum yield of transmission-mode GaAs photocathodes<br>指数掺杂结构对透射式GaAs光电阴极量子效率的影响研究
%A Zhang Yi-Jun
%A Niu Jun
%A Zhao Jing
%A Zou Ji-Jun
%A Chang Ben-Kang
%A <br>张益军
%A 牛军
%A 赵静
%A 邹继军
%A 常本康
%J 物理学报
%D 2011
%I 
%X The quantum yield formulas for exponential-doping and uniform-doping transmission-mode GaAs photocathodes are modified by adding a shortwave constraint factor to the photoelectron generation function in a one-dimensional continuity equation. Based on the modified transmission-mode quantum yield formulas, the experimental exponential-doping and uniform-doping transmission-mode quantum yield curves are respectively fitted, and the fitted curves are consistent well with the experimental curves. In addition, the fitted cathode performance parameters indicate that as compared with the uniform-doping photocathode, the exponential-doping photocathode can obtain a higher cathode performance because of the built-in electric field. The exponential-doping structure can effectively increase the quantum yield of transmission-mode photocathode.
%K transmission-mode photocathode
%K exponential-doping
%K quantum yield
%K built-in electric field<br>透射式光电阴极
%K 指数掺杂
%K 量子效率
%K 内建电场
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=29DF2CB55EF687E7EFA80DFD4B978260&aid=9880CD65C317F63D5FF6A773843D14E5&yid=9377ED8094509821&vid=BFE7933E5EEA150D&iid=B31275AF3241DB2D&sid=1002CE97C4775123&eid=1002CE97C4775123&journal_id=1000-3290&journal_name=物理学报&referenced_num=0&reference_num=23