%0 Journal Article
%T Manipulations of properties of the W-line emitting from the Si+ Self-ion-implanted Si thin films on insulated oxide layer<br>绝缘氧化层上自离子注入Si薄膜W线发光性能的调控
%A Wang Chong
%A Yang Yu
%A Yang Rui-Dong
%A Li Liang
%A Wei Dong
%A Jin Ying-Xia
%A Bao Ji-Ming
%A <br>王茺
%A 杨宇
%A 杨瑞东
%A 李亮
%A 韦冬
%A 靳映霞
%A Bao Ji-Ming
%J 物理学报
%D 2011
%I 
%X The Si+ self-ion-implanted and annealing experiments are conducted on the Si film based on the silicon-on-insulator wafers. The photoluminescence (PL) spectroscopy is used to investigate the luminescence properties of these Si film samples. Plentiful optical structures are observed in the PL spectra, including the D1, D2, D3, X, and the sharp W lines. By comparing the normalized PL intensities recorded by the same spectral experiments, we obtain the optimum self-ion-implanted and thermal annealing parameters. In addition, the defect origins and optical properties of the series of the D peaks and W line are well discussed.
%K SOI structure
%K self-ion-implantation
%K W line emission
%K near-infrared light emission device<br>SOI结构
%K 自离子注入
%K W线
%K 近红外发光器件
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=29DF2CB55EF687E7EFA80DFD4B978260&aid=F437B1BF01E7F486D3FD0F202330779D&yid=9377ED8094509821&vid=BFE7933E5EEA150D&iid=F3090AE9B60B7ED1&sid=FFFC73CE5BF03471&eid=FFFC73CE5BF03471&journal_id=1000-3290&journal_name=物理学报&referenced_num=0&reference_num=32