%0 Journal Article
%T Current collapse effect, interfacial thermal resistance and work temperature for AlGaN/GaN HEMTs<br>AlGaN/GaN高速电子迁移率晶体管器件电流坍塌效应与界面热阻和温度的研究
%A Gu Jiang
%A Wang Qiang
%A Lu Hong
%A <br>顾江
%A 王强
%A 鲁宏
%J 物理学报
%D 2011
%I 
%X The effects of operating temperature and the interfacial thermal resistance on device are researched by using a two-dimensional numerical simulator. A comparison between the simulated results and the experiment data demonstrates that hot electrons make a significant contribution to the negative differential output conductance which will increase with the increase of the work temperature under low drain voltage, and under upper drain voltage, the self-heating effect is an important factor to the current collapse which will become more serious with the work temperature and interfacial thermal resistance inereasing.
%K AlGaN/GaN HEMT devices
%K hot electron effect
%K self-heating effect
%K current collapse effect<br>AlGaN/GaN
%K HEMT器件
%K 热电子效应
%K 自加热效应
%K 电流坍塌效应
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=29DF2CB55EF687E7EFA80DFD4B978260&aid=27C14E609A3E452C4DF2627C6B58C9F4&yid=9377ED8094509821&vid=BFE7933E5EEA150D&iid=DF92D298D3FF1E6E&sid=FB3E33AC33B80E14&eid=FB3E33AC33B80E14&journal_id=1000-3290&journal_name=物理学报&referenced_num=0&reference_num=26