%0 Journal Article
%T Study of the effect of lithography deviation on 4H-SiC floating junction junction barrier Schottky diode<br>套刻偏差对4H-SiC 浮动结结势垒肖特基二极管的影响研究
%A Tang Xiao-Yan
%A Dai Xiao-Wei
%A Zhang Yu-Ming
%A Zhang Yi-Men
%A <br>汤晓燕
%A 戴小伟
%A 张玉明
%A 张义门
%J 物理学报
%D 2012
%I 
%X The breakdown voltage of 4H-SiC junction barrier schottky diode with floating junction is larger than that of traditional junction barrier Schottky diode under the condition of the same fixed on-resistance. It is a crucial technology that the alignment of lithography between p+ region of floating junction and main junction. The simulation results obtained using two-dimensional simulator ISE show that the breakdown voltage obviously drops with the deviation of lithography increasing. Although the breakdown characteristics of the dislocation and the alignment structure are similar, the series resistance of the dislocation structure is larger than the latter when the forward voltage is larger than 2 V.
%K junction barrier Schottky diode
%K floating junction
%K deviation of lithography<br>结势垒肖特基二极管
%K 浮动结
%K 套刻偏差
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=29DF2CB55EF687E7EFA80DFD4B978260&aid=78F360FC29C47911C567625BE155DE19&yid=99E9153A83D4CB11&vid=1D0FA33DA02ABACD&iid=5D311CA918CA9A03&sid=32FD30C6C6E86E4D&eid=50F5039277BE6DAC&journal_id=1000-3290&journal_name=物理学报&referenced_num=0&reference_num=7