%0 Journal Article
%T Study of physically modeling for small-scaled strained Si nMOSFET<br>小尺寸应变Si nMOSFET物理模型的研究
%A Qu Jiang-Tao
%A Zhang He-Ming
%A Qin Shan-Shan
%A Xu Xiao-Bo
%A Wang Xiao-Yan
%A Hu Hui-Yong
%A <br>屈江涛
%A 张鹤鸣
%A 秦珊珊
%A 徐小波
%A 王晓艳
%A 胡辉勇
%J 物理学报
%D 2011
%I 
%X In this paper, quasi-2D threshold voltage model of strained Si nMOS with polycrystalline SiGe gate is established based on the Guass Law and its I-V character model is also built based on the current density equation. The influence of relevant parameter on threshold voltage is analyzed by numerical analysis, and the validity of the model is verified by device simulator.
%K polycrystalline SiGe gate
%K Gauss law
%K threshold voltage
%K velocity overshoot effect<br>多晶SiGe栅
%K 高斯定理
%K 阈值电压
%K 速度过冲
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=29DF2CB55EF687E7EFA80DFD4B978260&aid=F437B1BF01E7F48640DC98D0B0642570&yid=9377ED8094509821&vid=BFE7933E5EEA150D&iid=9CF7A0430CBB2DFD&sid=46E966DA2FBCF40F&eid=A8A05DA66025FDFF&journal_id=1000-3290&journal_name=物理学报&referenced_num=0&reference_num=19