%0 Journal Article
%T Two-dimensional threshold voltage model of sub-100 nm strained-Si/SiGe nMOSFET<br>亚100 nm应变Si/SiGe nMOSFET阈值电压二维解析模型
%A Wang Guan-Yu
%A Zhang He-Ming
%A Wang Xiao-Yan
%A Wu Tie-Feng
%A Wang Bin
%A <br>王冠宇
%A 张鹤鸣
%A 王晓艳
%A 吴铁峰
%A 王斌
%J 物理学报
%D 2011
%I 
%X In this paper, based on the two-dimensional (2D) Possion's equation, an analytical model of threshold voltage, which is applied to a sub-100nm strained-Si/SiGe nMOSFET, is pro- posed. The secondary effects induced by reducing size such as short-channel effects, quantum mechanical effects are also taken into consideration in order to ensure the accuracy of the model. Then the evidence for the validity of our model is derived from the comparison between analytical results and the simulation data from the 2D device simulator ISE. Finally, the influence of conventional arts in sub-100 nm device fabrication on threshold voltage is also discussed. The proposed model can also be easily used for reasonable analysis and design of sub-100nm strained-Si/SiGe nMOSFET.
%K sub-100 nm
%K strained-Si/SiGe nMOSFET
%K 2D surface potential
%K threshold voltage<br>亚100nm
%K 应变Si/SiGe
%K nMOSFET
%K 二维表面势
%K 阈值电压
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=29DF2CB55EF687E7EFA80DFD4B978260&aid=27C14E609A3E452C1319E18352E5FC4C&yid=9377ED8094509821&vid=BFE7933E5EEA150D&iid=DF92D298D3FF1E6E&sid=F8E5B28C53CBB8C8&eid=F8E5B28C53CBB8C8&journal_id=1000-3290&journal_name=物理学报&referenced_num=0&reference_num=20