%0 Journal Article
%T One-shadow-mask ultralow-voltage indium-tin-oxide thin-film transistors on paper substrates<br>一步掩膜法制备超低压ITO沟道纸上薄膜晶体管
%A Mao Yan-Kai
%A Jiang Jie
%A Zhou Bin
%A Dou Wei
%A <br>毛延凯
%A 蒋杰
%A 周斌
%A 窦威
%J 物理学报
%D 2012
%I 
%X A new kind of electric-double-layer indium-tin-oxide (ITO) thin-film transistor (TFT) is fabricated on a paper substrate by one-shadow-mask process. The channel layer can be simultaneously self-assembled between ITO source/drain electrodes by only one shadow mask during RF magnetron sputtering deposition at room temperature. Base on this, we choose microporous SiO2 with electric double layer effect as a gate dielectric, and successfully develop the ultralow-voltage oxide TFT on a paper substrate. The TFT exhibits a good performance with an ultralow operation voltage of 1.5 V, a field-effect mobility of 20.1 cm2/Vs , a subthreshold swing of 188mV/decade, and a large on-off ratio of 5× 105. The full-room-temperature oxide TFT on the paper substrate by one-shadow-mask process shows a lot of advantages, such as low operation voltage, simple device process, low cost, etc. Such a TFT is very promising for the application of low-power and portable electronic products in the future.
%K ultralow operation voltage
%K one-shadow-mask
%K electric double layers
%K microporous SiO2<br>超低工作电压
%K 一步掩模法
%K 双电荷层
%K 微孔SiO2
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=29DF2CB55EF687E7EFA80DFD4B978260&aid=2C2DE33E892A8820E49CD8FD42F1A15E&yid=99E9153A83D4CB11&vid=1D0FA33DA02ABACD&iid=E158A972A605785F&sid=A8A3FD580CD48154&eid=A8A3FD580CD48154&journal_id=1000-3290&journal_name=物理学报&referenced_num=0&reference_num=15