%0 Journal Article
%T High-rate deposition of microcrystalline silicon thin film by multi-step method<br>分步法高速沉积微晶硅薄膜
%A Gao Hai-Bo
%A Li Rui
%A Lu Jing-Xiao
%A Wang Guo
%A Li Xin-Lin
%A Jiao Yue-Chao
%A <br>高海波
%A 李瑞
%A 卢景霄
%A 王果
%A 李新利
%A 焦岳超
%J 物理学报
%D 2012
%I 
%X To improve the uniformity of crystalline volume fraction (Xc) along the deposition direction in microcrystalline silicon films, very high frequency plasma enhanced chemical vapor deposition (VHF-PECVD), combined with parameters smoothly changed two-step method, is adopted to prepare high-rate microcrystalline silicon films on glass subtrates. With a power density of 2.1 W/cm2, silane concentration between 6% and 9.6%, a difference between Xc measured in the film direction and that in the glass direction, is just 2 percent. With a silane concentration of 9.6%, Xc, measured in the film direction and the glass direction respectively reach 50% and 48%, close to 2 percent, relative difference just 4 percent, whereas the deposition rate reaches 3.43 nm/s. What is more, Xc difference can reduce to 1 percent by strictly controlling the transitional parameters. It shows that the new deposition method not only curb the incubation layers and improve the vertical structure, but also give a larger range for film optimizing in the future.
%K microcrystalline silicon thin film
%K amorphous incubation layer
%K high-rate growth
%K very high frequency plasma enhanced vapor deposition<br>微晶硅薄膜
%K 非晶孵化层
%K 高速沉积
%K 甚高频等离子体增强化学气相沉积
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=29DF2CB55EF687E7EFA80DFD4B978260&aid=9903A07B9322879A65F46B8DEC396DD5&yid=99E9153A83D4CB11&vid=1D0FA33DA02ABACD&iid=CA4FD0336C81A37A&sid=1FFB2755C20C32CD&eid=1FFB2755C20C32CD&journal_id=1000-3290&journal_name=物理学报&referenced_num=0&reference_num=21