%0 Journal Article
%T A analytic model for the threshold-voltage of novel high-speed semiconductor device IMOS<br>新型高速半导体器件IMOS阈值电压解析模型
%A Li Yu-Chen
%A Zhang He-Ming
%A Zhang Yu-Ming
%A Hu Hui-Yong
%A Xu Xiao-Bo
%A Qin Shan-Shan
%A Wang Guan-Yu
%A <br>李妤晨
%A 张鹤鸣
%A 张玉明
%A 胡辉勇
%A 徐小波
%A 秦珊珊
%A 王冠宇
%J 物理学报
%D 2012
%I 
%X A threshold voltage model is created by analyzing differents distributions of surface electric field and the condition of avalanche breakdown, based on the structure of a novel high speed semiconductor device p-IMOS in this paper. Model verification is carried out using the 2D device simulator ISE. By analyzing the model, the dependences of threshold voltage on drain-source voltage, Si layer thickness and gate length are studied. The results of the model are in good agreement with experimental results and ISE simulation results. The proposed model can also be easily used for the reasonable analysis and the design of p-IMOS.
%K IMOS
%K subthreshold swing
%K avalanche breakdown
%K threshold voltage<br>IMOS
%K 亚阈值摆幅
%K 雪崩击穿
%K 阈值电压
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=29DF2CB55EF687E7EFA80DFD4B978260&aid=2C2DE33E892A8820C35D49791E89C647&yid=99E9153A83D4CB11&vid=1D0FA33DA02ABACD&iid=E158A972A605785F&sid=C42282D6E44C0151&eid=C42282D6E44C0151&journal_id=1000-3290&journal_name=物理学报&referenced_num=0&reference_num=17