%0 Journal Article
%T Study of gate depletion effect in strained Si NMOSFET with polycrystalline silicon germanium gate<br>Poly-Si1-xGex栅应变SiN型金属-氧化物-半导体场效应管栅耗尽模型研究
%A Hu Hui-Yong
%A Lei Shuai
%A Zhang He-Ming
%A Song Jian-Jun
%A Xuan Rong-Xi
%A Shu Bin
%A Wang Bin
%A <br>胡辉勇
%A 雷帅
%A 张鹤鸣
%A 宋建军
%A 宣荣喜
%A 舒斌
%A 王斌
%J 物理学报
%D 2012
%I 
%X Based on the analysis of Poly-Si1-xGex gate work function and by solving Poisson equation, the models of vertical electric field and potential distribution in strained Si NMOSFET with Poly-Si1-xGex gate are obtained; threshold voltage model and the gate depletion thickness and it's normalization model are established in strained Si NMOSFET based on the above results, with the gate depletion effect of Poly-Si1-xGex taken into account. Then the influences of device geometrical and physical parameters of device especially the Ge fraction on Poly-Si1-xGex gate depletion thickness are investigated. Furthermore, the effect of gate depletion thickness on threshold voltage is analyzed. It shows that the poly depletion thickness decreases with the increases of Ge fraction and gate doping concentration, while it increases with the increase of substrate doping concentration. Furthermore, the threshold voltage increases with the increase of gate depletion thickness. The results can provide theoretical references to the design of strained Si devices.
%K ploy-Si1-xGex
%K strained Si
%K gate depletion effect
%K threshold voltage<br>Poly-Si1-xGex
%K 应变Si
%K 栅耗尽
%K 阈值电压
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=29DF2CB55EF687E7EFA80DFD4B978260&aid=78F360FC29C479112338C7A15EC59EF7&yid=99E9153A83D4CB11&vid=1D0FA33DA02ABACD&iid=F3090AE9B60B7ED1&sid=733E1D505C829D2C&eid=733E1D505C829D2C&journal_id=1000-3290&journal_name=物理学报&referenced_num=0&reference_num=22