%0 Journal Article
%T Comparison between exponential-doping reflection-mode GaAlAs and GaAs photocathodes<br>指数掺杂反射式GaAlAs和GaAs光电阴极比较研究
%A Chen Xin-Long
%A Zhao Jing
%A Chang Ben-Kang
%A Xu Yuan
%A Zhang Yi-Jun
%A Jin Mu-Chun
%A Hao Guang-Hui
%A <br>陈鑫龙
%A 赵静
%A 常本康
%A 徐源
%A 张益军
%A 金睦淳
%A 郝广辉
%J 物理学报
%D 2013
%I 
%X A reflection-mode GaAlAs photocathode and a reflection-mode GaAs photocathode using exponential-doping technique are prepared by metal organic chemical vapor deposition, and the Al content of GaAlAs emission layer is 0.63. The two photocathodes are activated in an ultra-high vacuum system, and the spectral response curves are measured after activation. The quantum efficiency formula for exponential-doping reflection-mode photocathode is used to fit the experimental curves of the two photocathodes respectively, and the effects of some performance parameters on photoemission are analyzed, such as electron diffusion and drift length, back-interface recombination velocity, surface electron escape probability, etc. The results show that the Al content of the GaAlAs photocathode plays a bad role in the photoemission compared with that the GaAs photocathode, but it solves the problem that the GaAs photocathode cannot be well used in the area of detecting the narrow wavelength light due to the broad spectral response. The reflection-mode GaAlAs photocathode prepared is responsive to the blue and green light.
%K exponential-doping
%K reflection-mode
%K photocathode
%K quantum efficiency<br>指数掺杂
%K 反射式
%K 光电阴极
%K 量子效率
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=29DF2CB55EF687E7EFA80DFD4B978260&aid=96293AEB9294B34D8FB687FA0B623F1B&yid=FF7AA908D58E97FA&iid=38B194292C032A66&journal_id=1000-3290&journal_name=物理学报&referenced_num=0&reference_num=0