%0 Journal Article
%T Research on the capacitance-voltage characteristic of strained-silicon NMOS accumulation capacitor<br>应变Si NMOS积累区电容特性研究
%A Wang Bin
%A Zhang He-Ming
%A Hu Hui-Yong
%A Zhang Yu-Ming
%A Shu Bin
%A Zhou Chun-Yu
%A Li Yu-Chen
%A Lü
%A Yi
%A <br>王斌
%A 张鹤鸣
%A 胡辉勇
%A 张玉明
%A 舒斌
%A 周春宇
%A 李妤晨
%A 吕懿
%J 物理学报
%D 2013
%I 
%X Accumulation MOS capacitor is more linear than inversion MOS capacitor and is almost independent of the operation frequency. In this paper, we present first the formation mechanism of the "plateau", observed in the C-V characteristic of the strained-Si NMOS capacitor, and then a physical model for strained-Si NMOS capacitor in accumulation region. The results from the model show to be in excellent agreement with the experimental data. The proposed model can provide valuable reference for the strained-Si device design, and is has been implemented in the software for extracting the parameter of strained-Si MOSFET.
%K strained-Si NMOS
%K accumulation capacitor
%K plateau
%K charge distribution<br>应变Si
%K NMOS
%K 积累区电容
%K 台阶效应
%K 电荷分布
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=29DF2CB55EF687E7EFA80DFD4B978260&aid=164B9414955546438D123005571098B3&yid=FF7AA908D58E97FA&iid=94C357A881DFC066&journal_id=1000-3290&journal_name=物理学报&referenced_num=0&reference_num=0