%0 Journal Article
%T High stability and linear tuning wavelength tunable resonant cavity enhanced photo-detector grown on GaAs<br>高稳定线性调谐GaAs基波长可调谐共振腔增强型探测器
%A Wang Jie
%A Han Qin
%A Yang Xiao-Hong
%A Ni Hai-Qiao
%A He Ji-Fang
%A Wang Xiu-Ping
%A <br>王杰
%A 韩勤
%A 杨晓红
%A 倪海桥
%A 贺继方
%A 王秀平
%J 物理学报
%D 2012
%I 
%X A wavelength tunable resonant cavity enhanced photo-detector grown on GaAs is fabricated. The quantum wells of In0.25Ga0.75As/GaAs in the active region are grown by molecular beam epitaxy. The peak of the response spectrum at 0 work bias is located at 1071 nm. When the tuning voltage rises from 0 V to 21 V, the peak shows a blue shift of 23 nm, reaching 1048 nm. Statistical results show that there is a stable accurate corresponding relation between the tuning voltage and the response peak. The relation is approximately linear when the tuning voltage is greater than 5 V. Some theoretical analysis is performed on the test results.
%K GaAs
%K resonant cavity enhanced photo-detector
%K high stability
%K linear tuning<br>GaAs
%K 共振腔增强型探测器
%K 高稳定
%K 线性调谐
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=29DF2CB55EF687E7EFA80DFD4B978260&aid=9903A07B9322879A86F3B18753C5F5E1&yid=99E9153A83D4CB11&vid=1D0FA33DA02ABACD&iid=CA4FD0336C81A37A&sid=82E1634A4EDF0CC3&eid=82E1634A4EDF0CC3&journal_id=1000-3290&journal_name=物理学报&referenced_num=0&reference_num=12