%0 Journal Article
%T Calculation of positron lifetime of compound semiconductors<br>化合物半导体材料的正电子寿命计算
%A Chen Xiang-Lei
%A Zhang Jie
%A Du Huai-Jiang
%A Zhou Xian-Yi
%A Ye Bang-Jiao
%A <br>陈祥磊
%A 张杰
%A 杜淮江
%A 周先意
%A 叶邦角
%J 物理学报
%D 2010
%I 
%X On the basis of of local density approximation (LDA) and general gradient approximation (GGA), positron annihilation information has been calculated for five types of compound semiconductors, which are ZnO, GaN, GaAs, SiC and InP. The calculated information includes distribution of positron density, distribution of positron annihilation rate density, positron bulk lifetime, positron monovacancy lifetime and positron divacancy lifetime.
%K semiconductor
%K positron lifetime<br>半导体，
%K 正电子寿命
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=29DF2CB55EF687E7EFA80DFD4B978260&aid=519654C5E05A22D5F238B44B7145B8CD&yid=140ECF96957D60B2&vid=6AC2A205FBB0EF23&iid=CA4FD0336C81A37A&sid=70E3F4DEB0172F14&eid=C7B13290323C226E&journal_id=1000-3290&journal_name=物理学报&referenced_num=0&reference_num=0