%0 Journal Article
%T Effect of deposition rate on the scaling behavior of microcrystalline silicon films prepared by very high frequency-plasma enhanced chemical vapor deposition<br>沉积速率对甚高频等离子体增强化学气相沉积制备微晶硅薄膜生长标度行为的影响
%A Ding Yan-Li
%A Zhu Zhi-Li
%A Gu Jin-Hua
%A Shi Xin-Wei
%A Yang Shi-E
%A Gao Xiao-Yong
%A Chen Yong-Sheng
%A Lu Jing-Xiao
%A <br>丁艳丽
%A 朱志立
%A 谷锦华
%A 史新伟
%A 杨仕娥
%A 郜小勇
%A 陈永生
%A 卢景霄
%J 物理学报
%D 2010
%I 
%X Three sets of hydrogenated mierocrystalline silicon (μc-Si:H) films for different deposition time were prepared by very high frequency-plasma enhanced chemical vapor deposition with different deposition rates. The surface roughness evolution of μc-Si : H has been investigated using spectroscopic ellipsometry. For films with the deposition rate of 0.08 nm/s and 0. 24 nm/s, the surface roughness of films changes a little, and the growth exponent β is about 0.20. Similar β values ascribed to the adatoms have enough time to move to the site with lower energy under lower deposition rate. However, when the deposition rate increases to 0.66 nm/s, the surface roughness of films increases obviously, and the exponent β is about 0. 81, which is much higher than 0. 5 for zero diffusion limit in the scaling theory. The growth mode of high-rate deposited μc-Si:H is clearly different from that of lower-rate deposited μc-Si: H. This is due to the fact that the adatoms have no enough time to diffuse before being covered by the radicals of the next layer under high deposition rate, which decreases the surface diffusion of the adatom, and therefore increases the film surface roughening which results in a larger β. The case of β > 0. 5 is related to the shadowing effect.
%K microcrystalline silicon
%K spectroscopic ellipsometry
%K growth exponent
%K surface roughness<br>微晶硅薄膜，
%K 椭偏光谱法，
%K 生长指数，
%K 表面粗糙度
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=29DF2CB55EF687E7EFA80DFD4B978260&aid=BEC731C3304EE97241E5A4242F26BA94&yid=140ECF96957D60B2&vid=6AC2A205FBB0EF23&iid=0B39A22176CE99FB&sid=C9D6A9952042973F&eid=C1F642278C6E9D3E&journal_id=1000-3290&journal_name=物理学报&referenced_num=1&reference_num=0