%0 Journal Article
%T First-principles study on the band structure and optical properties of strained Ru_2 Si_3 semiconductor<br>Si基外延Ru_2Si_3电子结构及光学性质研究
%A Cui Dong-Meng
%A Xie Quan
%A Chen Qian
%A Zhao Feng-Juan
%A Li Xu-Zhen
%A <br>崔冬萌
%A 谢泉
%A 陈茜
%A 赵凤娟
%A 李旭珍
%J 物理学报
%D 2010
%I 
%X We calculated the band structure , density of states and optical properties of semiconductor material Ru_2Si_ 3 epitaxial-grown on Ru_2Si_3 (100)//Si(001) with Ru_2Si_3 010]//Si110] by using the pseudo-potential plane wave method based on first principles methods. As shown by the calculated results, orthorhombic Ru_2Si_3 is not only a directs emiconductor with the band gap of 0.773 eV, but also in stable condition when the lattice parameter a is 1.093 nm.The valence bands of Ru_2Si_3 are mainly composed o...
%K epitaxial
%K first-principles
%K electronic structure
%K optical properties<br>外延，
%K 第一性原理，
%K 电子结构，
%K 光学性质
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=29DF2CB55EF687E7EFA80DFD4B978260&aid=F2FF36F82474A608911BC1E4C0995B06&yid=140ECF96957D60B2&vid=6AC2A205FBB0EF23&iid=38B194292C032A66&sid=8E60891DE9EC9643&eid=D9AB0F6064BF4261&journal_id=1000-3290&journal_name=物理学报&referenced_num=0&reference_num=14