%0 Journal Article
%T Non-solvent addition induced self-organization for enhancement of performance of poly(3-hexylthiophene) organic field-effect transistors<br>非溶剂掺杂完善自组织机理提升高度区域规则的(3-己基噻吩)有机场效应晶体管器件性能的研究
%A Tian Xue-Yan
%A Zhao Su-Ling
%A Xu Zheng
%A Yao Jiang-Feng
%A Yao Jiang-Feng
%A Zhang Fu-Jun
%A <br>田雪雁
%A 赵谡玲
%A 徐征
%A 姚江峰
%A 张福俊
%A 徐叙瑢
%J 物理学报
%D 2011
%I 
%X In order to enhance the performance of poly(3-hexylthiophene) (RR-P3HT) organic field-effect transistors (OFET) by low temperature solution-process of non-solvent addition (acetonitrile and ethanol), the resulting self-organization of polymer semiconductor layer and performance of RR-P3HT OFET are studied in this paper. The results fshow that an appropriate non-solvent addition (acetonitrile and ethanol) promotes the formation of more microcrystalline lamellae and improves the self-organization of polymer semiconductor layer, resulting in electrical properties enhancement of polymer OFET. The results indicate that the field-effect of RR-P3HT OFET with 5% acetonitrile addition can reach 3.39×10-3 cm2/V ·s, which is higher by a factor of 8 than that with 0% acetonitrile addition. Encessive non-solvent addition (acetonitrile and ethanol) leads to more precipitates which reduce microcrystalline lamellae and lowers the quality of polymer film, resulting in performance degradation of polymer OFET.
%K regioregular poly(3-hexylthiophene) organic field-effect transistor
%K non-solvent addition
%K self-organization
%K field-effect mobility<br>高度区域规则的聚(3-己基噻吩)有机场效应晶体管
%K 非溶剂掺杂
%K 自组织机理
%K 场效应迁移率
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=29DF2CB55EF687E7EFA80DFD4B978260&aid=52D8C688FFDF5F5884782B462D70AD09&yid=9377ED8094509821&vid=BFE7933E5EEA150D&iid=38B194292C032A66&sid=867614A27AB666B2&eid=E04FC1B5BC47587B&journal_id=1000-3290&journal_name=物理学报&referenced_num=0&reference_num=19